IGBT Transistors


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PRX MG300J1US51 GTR Silicon N Channel IGBT Power Block Module
By PRX Powerex
In Stock
$31.25

mpn: TRAN160897, ean: 0616880101388,

4.2 out of 5 stars with 106 reviews
PRX GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications The Electrodes are Isolated from Case High Input Impedance Includes a Complete Half Bridge in one Package Enhancement-mode High speed : tf= 0.30μs (Max.) (IC = 300A) trr= 0.15μs (Max.) (IF = 300A) l Low saturation voltage : VCE(sat) = 2.70V (Max.) (IC = 300A Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V DC


S.U.R. & R Tools KT646V transistor silicon USSR 20 pcs
By S.U.R. & R Tools
In Stock
$13.50

ean: 4691007879872,

4.5 out of 5 stars with 70 reviews
Transistors KT646V silicon epitaxial-planar structures n-p-n amplifying. KT646V: • Structure of the transistor: n-p-n; • Рк max - Constant dissipated power of the collector: 1 W; • fgr - Boundary frequency of the transistor current transfer coefficient for a common emitter circuit: not less than 200 MHz; • UCBO max - Maximum collector-base voltage for a given collector return current and open-circuit emitter: 40 V; • Uebo max - The maximum emitter-base voltage for a given reverse


S.U.R. & R Tools Transistors silicon KT892A2 analoge MI10004PF1, TIP661 USSR 2 pcs
By S.U.R. & R Tools
In Stock
$13.50

ean: 4611010107977,

4.9 out of 5 stars with 104 reviews
Transistors KT892A2 silicon planar structures n-p-n compound amplifying. KT892A2: • Structure of the transistor: n-p-n; • Рк т max - Constant dissipated collector power with heat sink: 100 W; • fgr - Boundary frequency of the transistor current transfer factor for a common emitter circuit: more than 8 MHz; • Uker max - Maximum collector-emitter voltage for a given collector current and a specified resistance in the base-emitter circuit: 350 V (0.01 kΩ); • Uebo max - The maximum


Igbt Transistors Rc2 Igbt 5A 600V Dpak
By ON Semiconductor
In Stock
$13.38

mpn: NGTB05N60R2DT4G,

4.6 out of 5 stars with 66 reviews
ON SEMICONDUCTOR NGTB05N60R2DT4G - Igbt Transistors Rc2 Igbt 5A 600V Dpak600V. 5A. Igbt. Rc2. Transistors.


S.U.R. & R Tools Transistors silicon KT854B analoge MJE13006, 2N5540, RJH6674 USSR 10 pcs
By S.U.R. & R Tools
In Stock
$13.50

ean: 4670101556759,

4.7 out of 5 stars with 77 reviews
Transistors KT854B silicon epitaxial-planar structures n-p-n amplifying. KT854B: • Structure of the transistor: n-p-n; • Рк т max - Permanent dissipated collector power with heat sink: 60 W; • fgr - Boundary frequency of the transistor current transfer coefficient for the circuit with a common emitter: not less than 10 MHz; • Укбо max - Maximum collector-base voltage for a given collector return current and open circuit of the emitter: 400 V; • Uebo max - The maximum


S.U.R. & R Tools Transistors silicon KT9115A analoge 2SA1682-5, BF423 USSR 20 pcs
By S.U.R. & R Tools
In Stock
$13.50

ean: 4615455555102,

4.3 out of 5 stars with 75 reviews
Transistors KT9115A silicon epitaxial-planar structures p-n-p amplifying. Designed for use in high-frequency power amplifiers. KT9115A: • Structure of the transistor: p-n-p; • Рк т max - Constant dissipated collector power with heatsink: 10 W; • fgr - Boundary frequency of the transistor current transfer factor for a common emitter circuit: more than 90 MHz; • Uker samples - Breakdown voltage collector-emitter for a given collector current and a given resistance in the base-emitter


S.U.R. & R Tools Transistor silicon KT823V1 analoge BLX11, NTC2331, BD637 USSR 6 pcs
By S.U.R. & R Tools
In Stock
$13.50

ean: 4615465655120,

4.7 out of 5 stars with 130 reviews
KT823V1 Silicon Powerful bipolar transistors Darlington (n-p-n). KT823V1 are designed for use in switching circuits of wide and special applications. KT823V1: • Structure of the transistor: n-p-n; • Рк т max - Constantly dissipated collector power with heat sink: 20 W; • Ueb max - The maximum emitter-base voltage for a given reverse current of the emitter and open collector circuit: 80 V; • Iк max - Maximum permissible constant collector current: 2 A; • h21e - Static transistor


S.U.R. & R Tools Transistors silicon KT8232A-1 analoge ST6060, IR6060, BU941ZP USSR 2 pcs
By S.U.R. & R Tools
In Stock
$13.50

ean: 4600179879573,

4.8 out of 5 stars with 111 reviews
KT8232A-1 Silicon Powerful bipolar transistors Darlington (n-p-n). KT8232A-1: • Structure of the transistor: n-p-n; • Рк т max - Constant dissipated collector power with heat sink: 125 W; • Uebo max - The maximum emitter-base voltage for a given reverse current of the emitter and an open collector circuit: 5 V; • Iк max - Maximum permissible constant collector current: 20 A; • h21e - Static transistor current transfer coefficient for circuits with common emitter: 300 ... 8000; •


S.U.R. & R Tools Transistors silicon KT919V analoge 2N5483, MSC2001M, MRF2001M, 2SC1038 USSR 1 pcs
By S.U.R. & R Tools
In Stock
$13.50

ean: 4670101016758,

4.2 out of 5 stars with 64 reviews
Transistors KT919B silicon epitaxial-planar structures n-p-n generator. KT919B: • Structure of the transistor: n-p-n; • Рк т max - Constant dissipated collector power with heat sink: 3.25 W; • fgr - Boundary frequency of the transistor current transfer factor for a common emitter circuit: more than 1350 MHz; • UCBO max - Maximum collector-base voltage for a given collector return current and open-circuit emitter: 45 V; • Ueb max - The maximum emitter-base voltage for a given


S.U.R. & R Tools Transistor silicon KT6111V analoge 2N657, SS9014C USSR 43 pcs
By S.U.R. & R Tools
In Stock
$13.50

ean: 4605456557977,

4.2 out of 5 stars with 110 reviews
KT6111V Transistors are silicon, epitaxial-planar n-p-n structures are universal. KT6111V: • Structure of the transistor: n-p-n • Рк max - Continuous dissipated collector power: 250 mW; • fgr - Boundary frequency of the transistor current transfer coefficient for a common emitter circuit: not less than 300 MHz; • UCBO max - Maximum collector-base voltage for a given collector return current and open-circuit emitter: 50 V; • Uebo max - The maximum emitter-base voltage for a given


S.U.R. & R Tools KT645V Transistor silicon USSR 50 pcs
By S.U.R. & R Tools
In Stock
$13.50

ean: 4691097879875,

4.9 out of 5 stars with 72 reviews
Transistors KT645V silicon epitaxial-planar structures n-p-n universal. KT645V: • Structure of the transistor: n-p-n; • Рк max - Constantly dissipated collector power: 0.5 W; • fgr - Boundary frequency of the transistor current transfer coefficient for a common emitter circuit: not less than 200 MHz; • UCBO max - Maximum collector-base voltage for a given collector return current and open-circuit emitter: 40 V; • Uebo max - The maximum emitter-base voltage for a given reverse


Aexit IRG4PF50WD 51A Interfaces 900V Insulated Gate Radio Frequency Transceivers Transistor IGBT
By Aexit
In Stock
$13.80

mpn: _,

4.2 out of 5 stars with 11 reviews
Optimized for use in welding and switching-mode power supply applications. Low IGBT conduction losses, TO-247AC package.Product Name : Insulated Gate Transistor;Model No. : IRG4PF50WD. Collector Current : 51A;Collector-Emitter Voltage : 900V. Pin Length : 15mm/0.59'';Hole Diameter : 3.5mm/0.13''. Body Dimension : 20 x 15 x 5mm/0.78'' x 0.59'' x 0.2''(L*W*T);Net Weight : 6g. Package Content : 1 x IGBT.


S.U.R. & R Tools 2T951B (KT951B) transistor USSR 1 pcs
By S.U.R. & R Tools
In Stock
$63.50

ean: 4618356789782,

4.5 out of 5 stars with 106 reviews
2T951B Transistors silicon epitaxial-planar structures n-p-n amplifying linear. 2T951B in the frequency range 1.5 ... 30 MHz at a supply voltage of 28 V in the sealed equipment Structure of NPN Maximum allowable constant / pulse / collector current, not more than, A 3 Supply voltage / maximum permissible collector-base voltage, V 28 Operating frequency, not more than, MHz thirty Output power / pulse, not less than, W thirty Coefficient of power gain / efficiency of the collector 10 ...... 100


S.U.R. & R Tools Transistors silicon KT920B (2T920B) analoge 2N6080, BLW18 USSR 1 pcs
By S.U.R. & R Tools
In Stock
$13.50

ean: 4611010787971,

4.7 out of 5 stars with 104 reviews
KT920B (2T920B) Transistors KT920B (2T920B) silicon epitaxial-planar structures n-p-n generator. Designed for use in power amplifiers, frequency multipliers and auto-generators at frequencies of 50 ... 200 MHz at a supply voltage of 12.6 V. They are produced in a cermet casing with flat terminals and a mounting screw. KT920B (2T920B): • Structure of the transistor: n-p-n; • Рк т max - Constant dissipated collector power with heat dissipation: 10 W; • fgr - Boundary frequency of the


EVERYDI 10pcs/lpt IRGP4063D IRGP4063DPBF GP4063D IRGP4063 IGBT 600V 96A 330W TO-247 IC Best quality.
By EVERYDI
In Stock
$21.00

mpn: YAHKL-S5-1522, ean: 7031238177793,

4.7 out of 5 stars with 16 reviews
10pcs/lpt IRGP4063D IRGP4063DPBF GP4063D IRGP4063 IGBT 600V 96A 330W TO-247 IC Best quality..


S.U.R. & R Tools Transistors silicon 2T202G-1 (KT202G-1) USSR 20 pcs
By S.U.R. & R Tools
In Stock
$13.50

ean: 4619998978794,

4.3 out of 5 stars with 15 reviews
2T202G-1 (KT202G-1): • Structure of the transistor: P-N-P • РK max - Constant dissipated collector power: 15 mW; • fgr - Boundary frequency of the transistor current transfer coefficient for the circuit with a common emitter: not less than 5 MHz; • UCBO max - Maximum collector-base voltage for a given collector return current and open-circuit emitter: 25 V; • Uebo max - The maximum emitter-base voltage for a given reverse current of the emitter and an open collector circuit: 30 V;


S.U.R. & R Tools Transistor silicon KT517A USSR 50 pcs
By S.U.R. & R Tools
In Stock
$13.50

ean: 4605464555101,

4.8 out of 5 stars with 64 reviews
KT517A • Structure of the transistor: n-p-n; • Рк max - Permanent Dissipated Collector Power: 30 W; • Рк т max - Constant dissipated collector power with heatsink: 30 W; • fgr - Boundary frequency of the transistor current transfer factor for the common emitter circuit: 125 MHz; • Uke max - Maximum collector-emitter voltage for a given collector current and a given (finite) resistance in the base-emitter circuit: 500 V (0.1 kΩ); • Ueb max - The maximum emitter-base voltage for


S.U.R. & R Tools 2T9123B transistor silicon military USSR 1 pcs
By S.U.R. & R Tools
In Stock
$13.50

ean: 4621230101105,

4.0 out of 5 stars with 32 reviews
2T9123B Powerful bipolar n-p-n transistors Darlington with a dissipated power of 60 W and a boundary frequency of the current transfer coefficient of more than 130 MHz. Structure of n-p-n The maximum permissible collector current of the transistor is 12.5 A The maximum permissible collector current of the transistor is 30 A The maximum voltage between the collector and the emitter at a given collector current and resistance in the base-emitter circuit of 70 V Maximum collector-base voltage for


Aexit IRG4PSH71K 40A Interfaces 1200V Insulated Gate Radio Frequency Transceivers Transistor IGBT
By Aexit
In Stock
$12.57

mpn: _,

4.1 out of 5 stars with 7 reviews
Description: High short circuit rating IGBTs, optimized for motor control. Minimum switching losses combined with low conduction losses.Product Name : Insulated Gate Transistor;Model No. : IRG4PSH71K. Collector Current : 40A;Collector-Emitter Voltage : 1200V. Pin Length : 15mm/0.59'';Body Dimension : 20 x 15 x 5mm/0.78'' x 0.59'' x 0.2''(L*W*T). Net Weight : 7g. Package Content : 1 x IGBT.


Sruik Tool 5 Pcs IXSK35N120AU1 Encapsulation TO-264 High Voltage IGBT With Diode
By Sruik Tool
In Stock
$25.99

ean: 0721352290610,

4.2 out of 5 stars with 73 reviews
Sruik Tool 5 Pcs IXSK35N120AU1 Encapsulation TO-264 High Voltage IGBT With DiodeSruik Tool 5 Pcs IXSK35N120AU1 Encapsulation TO-264 High Voltage IGBT With Diode.



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